Strain profiles in ion implanted ceramic polycrystals: An approach based on reciprocal-space crystal selection
نویسندگان
چکیده
منابع مشابه
Vacancy and interstitial depth profiles in ion-implanted silicon
An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2016
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4939972